US Patent 11508823 Low capacitance low RC wrap-around-contact

A field effect transistor is provided. The field effect transistor includes a first source/drain on a substrate, a second source/drain on the substrate, and a channel region between the first source/drain and the second source/drain. The field effect transistor further includes a metal liner on at least three sides of the first source/drain and/or the second source/drain, wherein the metal liner covers less than the full length of a sidewall of the first source/drain and/or the second source/drain. The field effect transistor further includes a metal-silicide between the metal liner and the first source/drain and/or the second source/drain, and a conductive contact on the metal liner on the first source/drain and/or the second source/drain, wherein the conductive contact is a conductive material different from the conductive material of the metal liner.