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US Patent 11508823 Low capacitance low RC wrap-around-contact

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
December 23, 2020
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Date of Patent
November 22, 2022
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Patent Application Number
17132980
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Patent Citations
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US Patent 10276442 Wrap-around contacts formed with multiple silicide layers
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US Patent 10367077 Wrap around contact using sacrificial mandrel
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US Patent 10559656 Wrap-all-around contact for nanosheet-FET and method of forming same
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US Patent 10546957 Nanosheet FET including all-around source/drain contact
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US Patent 10586872 Formation of wrap-around-contact to reduce contact resistivity
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US Patent 10084094 Wrapped source/drain contacts with enhanced area
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US Patent 10236218 Methods, apparatus and system for forming wrap-around contact with dual silicide
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Patent Inventor Names
Ekmini Anuja De Silva
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Ruilong Xie
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Jing Guo
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Hao Tang
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Cheng Chi
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11508823
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Patent Primary Examiner
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Tong-Ho Kim
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CPC Code
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H01L 21/26506
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H01L 29/0665
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H01L 29/42392
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H01L 29/4908
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H01L 29/66742
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H01L 29/456
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H01L 29/401
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H01L 29/0847
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H01L 29/41733
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H01L 29/517
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