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US Patent 11515472 Multi-resistance MRAM
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Patent
Date Filed
December 2, 2020
Date of Patent
November 29, 2022
Patent Application Number
17109291
Patent Citations
US Patent 10229723 Spin orbit torque magnetoresistive random access memory containing composite spin hall effect layer including beta phase tungsten
US Patent 10381548 Multi-resistance MRAM
US Patent 10374148 Multi-resistance MRAM
US Patent 10528643 Vector-matrix multiplication using non-volatile memory cells
US Patent 10026478 Biasing scheme for multi-layer cross-point ReRAM
US Patent 10192789 Methods of fabricating dual threshold voltage devices
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11515472
Patent Primary Examiner
Hien N Nguyen
CPC Code
H01L 27/222
H01L 43/08
G11C 11/005
G11C 11/161
G11C 11/1675
G11C 11/54
G11C 11/401
H01L 43/02
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