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US Patent 11532522 Source/drain EPI structure for improving contact quality
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Current Assignee
Taiwan Semiconductor Manufacturing Company
Date Filed
April 2, 2021
Date of Patent
December 20, 2022
Patent Applicant
Taiwan Semiconductor Manufacturing Company
Patent Application Number
17221501
Patent Citations
US Patent 10396156 Method for FinFET LDD doping
US Patent 10164048 Method for forming source/drain contacts
US Patent 10468500 FinFET fabrication methods
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11532522
Patent Primary Examiner
Karen Kusumakar
CPC Code
H01L 21/823871
H01L 21/823821
H01L 29/41791
H01L 27/0924
H01L 21/823814
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