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US Patent 11532666 Magnetoresistive random access memory

Patent 11532666 was granted and assigned to United Microelectronics Corporation on December, 2022 by the United States Patent and Trademark Office.

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A semiconductor device includes a substrate having a magnetic tunneling junction (MTJ) region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region, and a first metal interconnection on the MTJ. Preferably, a top view of the MTJ includes a circle, a top view of the first metal interconnection includes a flat oval overlapping the circle, and the MTJ includes a bottom electrode, a fixed layer, a free layer, a capping layer, and a top electrode.

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