US Patent 11532666 Magnetoresistive random access memory
Patent 11532666 was granted and assigned to United Microelectronics Corporation on December, 2022 by the United States Patent and Trademark Office.
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Patent Inventor Names
Chih-Kai Kang0
Kuo-Hsing Lee0
Sheng-Yuan Hsueh0
Ting-Hsiang Huang0
Yi-Chung Sheng0
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US Patent 11532666 Magnetoresistive random access memory
Article
A semiconductor device includes a substrate having a magnetic tunneling junction (MTJ) region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region, and a first metal interconnection on the MTJ. Preferably, a top view of the MTJ includes a circle, a top view of the first metal interconnection includes a flat oval overlapping the circle, and the MTJ includes a bottom electrode, a fixed layer, a free layer, a capping layer, and a top electrode.
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
115326660
Date of Patent
December 20, 2022
0Patent Application Number
172077280
Date Filed
March 21, 2021
0Patent Citations
Patent Primary Examiner
CPC Code
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