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US Patent 11545392 Semiconductor component having through-silicon vias

Patent 11545392 was granted and assigned to Taiwan Semiconductor Manufacturing Company on January, 2023 by the United States Patent and Trademark Office.

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Patent attributes

Patent Applicant

Taiwan Semiconductor Manufacturing Company

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Current Assignee

Taiwan Semiconductor Manufacturing Company

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Wen-Chih Chiou0

Tsang-Jiuh Wu0

Li-Hsien Huang0

Hsiang-Yi Wang0

Ebin Liao0

Darryl Kuo0

Chun Hua Chang0

Chia-Lin Yu0

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Date of Patent

January 3, 2023

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Patent Application Number

170216000

Date Filed

September 15, 2020

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Patent Citations

US Patent 10784162 Method of making a semiconductor component having through-silicon vias

US Patent 10115634 Semiconductor component having through-silicon vias and method of manufacture

US Patent 10121875 Replacement gate structures for advanced integrated circuit structure fabrication

Patent Primary Examiner

David A Zarneke

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CPC Code

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A semiconductor component includes a substrate having an opening. The semiconductor component further includes a first dielectric liner in the opening, wherein the first dielectric liner having a thickness T

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