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US Patent 11557651 Nanosheet transistors with inner airgaps
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Patent
Date Filed
December 23, 2020
Date of Patent
January 17, 2023
Patent Application Number
17132798
Patent Citations
US Patent 10714570 Fabrication of perfectly symmetric gate-all-around FET on suspended nanowire using interface interaction
US Patent 10700064 Multi-threshold voltage gate-all-around field-effect transistor devices with common gates
US Patent 10714569 Producing strained nanosheet field effect transistors using a phase change material
US Patent 10243043 Self-aligned air gap spacer for nanosheet CMOS devices
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11557651
Patent Primary Examiner
Victor A Mandala
CPC Code
H01L 29/0653
H01L 29/66545
H01L 29/78696
H01L 29/0673
H01L 29/42392
H01L 29/4991
H01L 29/66439
H01L 29/6653
H01L 29/775
H01L 29/7848
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