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US Patent 11562900 Formation of SiOC thin films

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
March 6, 2020
Date of Patent
January 24, 2023
Patent Application Number
16811258
Patent Citations
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US Patent 10134757 Method of processing a substrate and a device manufactured by using the method
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US Patent 10186420 Formation of silicon-containing thin films
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US Patent 10424476 Formation of SiOCN thin films
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US Patent 10424477 Si precursors for deposition of SiN at low temperatures
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US Patent 10453675 Organoaminosilane precursors and methods for depositing films comprising same
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US Patent 10504901 Substrate processing method and device manufactured using the same
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US Patent 10510529 Formation of SiOCN thin films
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US Patent 10566186 Methods of encapsulation
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US Patent 10600637 Formation of SiOC thin films
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US Patent 10847529 Substrate processing method and device manufactured by the same
•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11562900
Patent Primary Examiner
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Bret P Chen
CPC Code
‌
C23C 16/325
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C23C 16/401
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C23C 16/45536
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C23C 16/40
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C23C 16/30

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