Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ming-Fa Chen0
Hsien-Wei Chen0
Ching-Jung Yang0
Date of Patent
January 24, 2023
0Patent Application Number
158953580
Date Filed
February 13, 2018
0Patent Primary Examiner
The present disclosure provides a semiconductor structure including a substrate, a first die vertically over the substrate, a second die vertically over the substrate and laterally separated from the first die with a gap, and an insulation material in the gap. The substrate is at least partially overlapped with the gap when viewed from a top view perspective, and a Young's modulus of the substrate is higher than that of the insulation material.
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