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US Patent 11563082 Reduction of drain leakage in nanosheet device
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Patent
Date Filed
January 15, 2020
Date of Patent
January 24, 2023
Patent Application Number
16743256
Patent Citations
US Patent 11189616 Multi-threshold voltage non-planar complementary metal-oxtde-semiconductor devices
US Patent 10249541 Forming a hybrid channel nanosheet semiconductor structure
US Patent 10297671 Uniform threshold voltage for nanosheet devices
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11563082
Patent Primary Examiner
Peter Bradford
CPC Code
H01L 21/02532
H01L 21/31111
H01L 29/0653
H01L 29/0847
H01L 29/1033
H01L 29/49
H01L 29/66553
H01L 29/78696
B82Y 10/00
H01L 29/0665
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