US Patent 11563115 Semiconductor device

According to the embodiment of the invention, the semiconductor device includes a semiconductor member, a first electrode, a second electrode, a third electrode, a first conductive member, and a first insulating member. The first semiconductor member includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The second semiconductor region includes one of a first material and a second material. The third semiconductor region is provided between at least a part of the first semiconductor region and the second semiconductor region. The first electrode is electrically connected with the first semiconductor region. The second electrode is electrically connected with the second semiconductor region. At least a part of the third semiconductor region is between an other portion of the third electrode and the first conductive member. At least a part of the first insulating member is between the third electrode and the semiconductor member.