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US Patent 11563115 Semiconductor device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
January 15, 2021
Date of Patent
January 24, 2023
Patent Application Number
17150029
Patent Citations
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US Patent 10756207 Lateral III-nitride devices including a vertical gate module
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US Patent 10043877 Metal-insulator-semiconductor field effect transistor (MISFET) device and method for manufacturing the same
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US Patent 10658500 Layer structure for a group-III-nitride normally-off transistor
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11563115
Patent Primary Examiner
‌
Natalia A Gondarenko
CPC Code
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H01L 29/7783
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H01L 29/66803
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H01L 29/6653
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H01L 29/7788
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H01L 29/66924
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H01L 29/36
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H01L 29/8083
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H01L 29/2003
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H01L 29/66462
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H01L 29/66431
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