Patent attributes
A method for fabricating a thick crack-free dielectric film on a wafer for device fabrication is disclosed herein. A stress-release pattern is fabricated in an oxide layer of the wafer, which surrounds a number of device regions. The stress-release pattern comprises a plurality of recessions, which are spaced periodically along at least one direction. The plurality of recessions interrupt the continuous film during the dielectric film deposition, to prevent cracks from forming in the dielectric film and propagating into the device regions. Such that, a thick crack-free dielectric film can be achieved in the device regions, which are formed by patterning the dielectric layer. Furthermore, conditions of the dielectric film deposition process can be tuned to ensure quality of the deposited dielectric film. Still further, a plurality of deposition runs may be performed to deposit the thick crack-free dielectric film.
