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US Patent 11637179 Airgap vertical transistor without structural collapse

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
December 23, 2020
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Date of Patent
April 25, 2023
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Patent Application Number
17131904
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Patent Citations
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US Patent 10680102 Reduction of top source/drain external resistance and parasitic capacitance in vertical transistors
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US Patent 10832962 Formation of an air gap spacer using sacrificial spacer layer
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US Patent 10164104 Method to form air-gap spacers and air-gap spacer-containing structures
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US Patent 10170588 Method of forming vertical transport fin field effect transistor with high-K dielectric feature uniformity
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US Patent 10395988 Vertical FET transistor with reduced source/drain contact resistance
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Patent Citations Received
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US Patent 11978783 Vertical fin field effect transistor devices with reduced top source/drain variability and lower resistance
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11637179
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Patent Primary Examiner
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Yasser A Abdelaziez
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CPC Code
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H01L 21/764
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H01L 21/76802
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H01L 27/088
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H01L 29/0649
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H01L 29/0653
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H01L 29/7827
0
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H01L 21/31116
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H01L 21/823487
0
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H01L 21/7682
0
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H01L 29/6653
0
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