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US Patent 11640910 Method for cutting off FIN field effect transistor

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Is a

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Liyao Liu0

Yingju Chen0

Yenchan Chiu0

Chanyuan Hu0

Date of Patent

May 2, 2023

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Patent Application Number

171658060

Date Filed

February 2, 2021

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Patent Citations

US Patent 10361125 Methods and structures for forming uniform fins when using hardmask patterns

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US Patent 10985264 Semiconductor device and method for fabricating the same

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US Patent 10109531 Semiconductor structure having a bump lower than a substrate base and a width of the bump larger than a width of fin shaped structures, and manufacturing method thereof

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US Patent 10685838 Semiconductor structure providing for an increased pattern density on a substrate and method for forming same

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Patent Primary Examiner

Eduardo A Rodela

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CPC Code

0

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A method for cutting off a fin in a field effect transistor, comprising: step

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