US Patent 11646220 Raised via for terminal connections on different planes
Patent 11646220 was granted and assigned to Taiwan Semiconductor Manufacturing Company on May, 2023 by the United States Patent and Trademark Office.
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US Patent 11646220 Raised via for terminal connections on different planes
A method includes forming a metal layer extending into openings of a dielectric layer to contact a first metal pad and a second metal pad, and bonding a bottom terminal of a component device to the metal layer. The metal layer has a first portion directly underlying and bonded to the component device. A raised via is formed on the metal layer, and the metal layer has a second portion directly underlying the raised via. The metal layer is etched to separate the first portion and the second portion of the metal layer from each other. The method further includes coating the raised via and the component device in a dielectric layer, revealing the raised via and a top terminal of the component device, and forming a redistribution line connecting the raised via to the top terminal.
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