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US Patent 11658043 Selective anisotropic metal etch

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Current Assignee
Applied Materials
Applied Materials
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Date Filed
July 29, 2021
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Date of Patent
May 23, 2023
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Patent Applicant
Applied Materials
Applied Materials
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Patent Application Number
17389119
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Patent Citations
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US Patent 10096487 Atomic layer etching of tungsten and other metals
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US Patent 10186426 Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch)
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US Patent 10304659 Ale smoothness: in and outside semiconductor industry
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US Patent 10354888 Method and apparatus for anisotropic tungsten etching
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US Patent 10515816 Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
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US Patent 10515955 Methods of manufacturing transistor gate structures by local thinning of dummy gate stacks using an etch barrier
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US Patent 10727073 Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
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US Patent 11069535 Atomic layer etch of tungsten for enhanced tungsten deposition fill
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US Patent 10763083 High energy atomic layer etching
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US Patent 8962224 Methods for controlling defects for extreme ultraviolet lithography (EUVL) photomask substrate
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•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11658043
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Patent Primary Examiner
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Stephanie P Duclair
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