US Patent 11658273 Passivation for a semiconductor light emitting device
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US Patent 11658273 Passivation for a semiconductor light emitting device
Article
In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.
Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
116582730
Date of Patent
May 23, 2023
0Patent Application Number
171291640
Date Filed
December 21, 2020
0Patent Citations
Patent Primary Examiner
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