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US Patent 11664272 Etch profile control of gate contact opening
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Patent
0
Date Filed
February 22, 2021
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Date of Patent
May 30, 2023
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Patent Application Number
17181768
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Patent Citations
US Patent 9859386 Self aligned contact scheme
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9831183 Contact structure and method of forming
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US Patent 9105490 Contact structure of semiconductor device
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US Patent 9406804 FinFETs with contact-all-around
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US Patent 9443769 Wrap-around contact
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US Patent 9548366 Self aligned contact scheme
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11664272
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Patent Primary Examiner
Karen Kusumakar
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CPC Code
H01L 21/76802
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H01L 21/76804
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H01L 21/76831
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H01L 21/76832
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H01L 23/5226
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H01L 23/53295
0
H01L 21/31116
0
H01L 21/76877
0
H01L 21/02326
0
H01L 21/0234
0
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