Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Sheng-Hsuan Lin0
Yu-Hung Lin0
Mei-Hui Fu0
Date of Patent
November 28, 2017
0Patent Application Number
145328860
Date Filed
November 4, 2014
0Patent Citations Received
...
Patent Primary Examiner
Patent abstract
Contact structures and methods of forming contacts structures are contemplated by this disclosure. A structure includes a dielectric layer over a substrate, an adhesion layer, a silicide, a barrier layer, and a conductive material. The dielectric layer has an opening to a surface of the substrate. The adhesion layer is along sidewalls of the opening. The silicide is on the surface of the substrate. The barrier layer is on the adhesion layer and the silicide, and the barrier layer directly adjoins the silicide. The conductive material is on the barrier layer in the opening.
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