US Patent 11670367 Two memory cells sensed to determine one data value

Apparatuses, methods, and systems for sensing two memory cells to determine one data value are described herein. An embodiment includes a memory having a plurality of memory cells and circuitry configured to sense memory states of each of two memory cells to determine one data value. One data value is determined by sensing the memory state of a first one of the two memory cells using a first sensing voltage in a sense window between a first threshold voltage distribution corresponding to a first memory state and a second threshold voltage distribution corresponding to a second memory state and sensing the memory state of a second one of the two memory cells using a second sensing voltage in the sense window. The first and second sensing voltages are selectably closer in the sense window to the first threshold voltage distribution or the second threshold voltage distribution.