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US Patent 11672189 Two-terminal reversibly switchable memory device

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 US Patent 11672189 Two-terminal reversibly switchable memory device

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A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric filed to cause oxygen ionic motion.

Infobox
Is a
Patent
Patent
0
Patent Applicant
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Hefei Reliance Memory Ltd.
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Current Assignee
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Hefei Reliance Memory Ltd.
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
116721890
Date of Patent
June 6, 2023
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Patent Application Number
171946090
Date Filed
March 8, 2021
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Patent Citations
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US Patent 7139667 Method for calibrating a volumetric flow meter having an array of sensors
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US Patent 7148533 Memory resistance film with controlled oxygen content
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US Patent 7177181 Current sensing method and apparatus particularly useful for a memory array of cells having diode-like characteristics
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US Patent 7188534 Multi-phase coriolis flowmeter
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US Patent 7227775 Two terminal memory array having reference cells
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US Patent 7256415 Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
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US Patent 7326979 Resistive memory device with a treated interface
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US Patent 7339811 Stacked columnar 1T-nMTJ MRAM structure and its method of formation and operation
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US Patent 7360453 In-line measuring devices and method for compensation measurement errors in in-line measuring devices
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US Patent 7363800 Apparatus and method for measuring compositional parameters of a mixture
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US Patent 7379364 Sensing a signal in a two-terminal memory array having leakage current
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US Patent 7394679 Multi-resistive state element with reactive metal
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US Patent 7394680 Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode
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US Patent 7400006 Conductive memory device with conductive oxide electrodes
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US Patent 7405960 Semiconductor memory device and method for biasing dummy line therefor
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US Patent 7412903 In-line measuring devices and method for compensation measurement errors in in-line measuring devices
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US Patent 7417271 Electrode structure having at least two oxide layers and non-volatile memory device having the same
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US Patent 7433222 Nonvolatile semiconductor memory device
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US Patent 7443711 Non-volatile programmable impedance nanoscale devices
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US Patent 7463546 Method for using a passive element memory array incorporating reversible polarity word line and bit line decoders
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US Patent 7464621 Longitudinally displaced shifter
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US Patent 7505344 Current sensing method and apparatus particularly useful for a memory array of cells having diode-like characteristics
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US Patent 7508695 Nonvolatile semiconductor memory device and data writing method
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US Patent 7538338 Memory using variable tunnel barrier widths
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US Patent 7608467 Switchable resistive perovskite microelectronic device with multi-layer thin film structure
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US Patent 7633790 Multi-resistive state memory device with conductive oxide electrodes
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US Patent 7639521 Resistive memory cells and devices having asymmetrical contacts
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US Patent 7643344 Variable resistive memory
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US Patent 7701791 Low read current architecture for memory
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US Patent 7706177 Method of programming cross-point diode memory array
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US Patent 7719876 Preservation circuit and methods to maintain values representing data in one or more layers of memory
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US Patent 7733685 Cross point memory cell with distributed diodes and method of making same
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US Patent 7782650 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
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US Patent 7842991 Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same
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US Patent 7884349 Selection device for re-writable memory
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US Patent 7889539 Multi-resistive state memory device with conductive oxide electrodes
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US Patent 7898841 Preservation circuit and methods to maintain values representing data in one or more layers of memory
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US Patent 7902869 Extensible three dimensional circuit
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US Patent 7924608 Forced ion migration for chalcogenide phase change memory device
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US Patent 7929345 Push-pull memory cell configured for simultaneous programming of n-channel and p-channel non-volatile transistors
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US Patent 7955871 Method of using a switchable resistive perovskite microelectronic device with multi-layer thin film structure
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US Patent 7961494 Non-volatile multi-level re-writable memory cell incorporating a diode in series with multiple resistors and method for writing same
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US Patent 7983065 Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
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US Patent 7985963 Memory using variable tunnel barrier widths
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US Patent 8139409 Access signal adjustment circuits and methods for memory cells in a cross-point array
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US Patent 9570515 Memory element with a reactive metal layer
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US Patent 9806130 Memory element with a reactive metal layer
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Patent Primary Examiner
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Bo Fan
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CPC Code
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H01L 27/2481
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H01L 27/2436
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H01L 45/08
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