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US Patent 11672189 Two-terminal reversibly switchable memory device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
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Hefei Reliance Memory Ltd.
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Date Filed
March 8, 2021
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Date of Patent
June 6, 2023
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Patent Applicant
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Hefei Reliance Memory Ltd.
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Patent Application Number
17194609
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Patent Citations
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US Patent 7256415 Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
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US Patent 7326979 Resistive memory device with a treated interface
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US Patent 7339811 Stacked columnar 1T-nMTJ MRAM structure and its method of formation and operation
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US Patent 7360453 In-line measuring devices and method for compensation measurement errors in in-line measuring devices
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US Patent 7363800 Apparatus and method for measuring compositional parameters of a mixture
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US Patent 7379364 Sensing a signal in a two-terminal memory array having leakage current
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US Patent 7394679 Multi-resistive state element with reactive metal
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US Patent 7394680 Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode
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US Patent 7400006 Conductive memory device with conductive oxide electrodes
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US Patent 7405960 Semiconductor memory device and method for biasing dummy line therefor
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•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11672189
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Patent Primary Examiner
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Bo Fan
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CPC Code
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H01L 27/2436
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H01L 27/2481
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H01L 45/08
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