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US Patent 11680314 Films of desired composition and film properties

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
March 25, 2022
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Date of Patent
June 20, 2023
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Patent Application Number
17704572
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Patent Citations
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US Patent 7695765 Methods for producing low-stress carbon-doped oxide films with improved integration properties
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US Patent 9371579 Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing films
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US Patent 9391086 Nonvolatile semiconductor memory device and method of manufacturing nonvolatile semiconductor memory device
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US Patent 9591738 Plasma generator systems and methods of forming plasma
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US Patent 9837270 Densification of silicon carbide film using remote plasma treatment
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US Patent 10002787 Staircase encapsulation in 3D NAND fabrication
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US Patent 10211310 Remote plasma based deposition of SiOC class of films
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US Patent 10297442 Remote plasma based deposition of graded or multi-layered silicon carbide film
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US Patent 10325773 Conformal deposition of silicon carbide films
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US Patent 10472714 Method to obtain SiC class of films of desired composition and film properties
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•••
Patent Citations Received
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US Patent 11894227 Conformal deposition of silicon carbide films
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11680314
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Patent Primary Examiner
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Kelly M Gambetta
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CPC Code
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C23C 16/452
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C23C 16/50
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C23C 16/505
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C23C 16/52
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H01L 21/02167
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H01L 21/02216
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H01L 21/02126
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H01L 21/02222
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H01L 21/02274
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C23C 16/325
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