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US Patent 11682560 Systems and methods for hafnium-containing film removal

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
Applied Materials
Applied Materials
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Date Filed
October 11, 2018
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Date of Patent
June 20, 2023
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Patent Applicant
Applied Materials
Applied Materials
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Patent Application Number
16157419
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Patent Citations
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US Patent 7166233 Pulsed plasma processing method and apparatus
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US Patent 7183214 High-density plasma (HDP) chemical vapor deposition (CVD) methods and methods of fabricating semiconductor devices employing the same
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US Patent 7196342 Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
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US Patent 7235137 Conductor treating single-wafer type treating device and method for semi-conductor treating
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US Patent 7244474 Chemical vapor deposition plasma process using an ion shower grid
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US Patent 7252716 Gas injection apparatus for semiconductor processing system
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US Patent 7253123 Method for producing gate stack sidewall spacers
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US Patent 7256370 Vacuum thermal annealer
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US Patent 7288482 Silicon nitride etching methods
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US Patent 7291360 Chemical vapor deposition plasma process using plural ion shower grids
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•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11682560
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Patent Primary Examiner
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Thomas T Pham
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CPC Code
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H01L 21/32135
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H01L 21/31116
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C23F 1/00
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C23F 1/12
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C23F 1/02
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H01L 21/3205
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H01L 21/321
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H01L 21/32115
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H01L 21/3212
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H01L 21/3213
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