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US Patent 11682617 High aspect ratio vias for integrated circuits

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
December 22, 2020
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Date of Patent
June 20, 2023
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Patent Application Number
17129971
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Patent Citations
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US Patent 9613861 Damascene wires with top via structures
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US Patent 9601426 Interconnect structure having subtractive etch feature and damascene feature
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US Patent 10020223 Reduced tip-to-tip and via pitch at line end
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US Patent 8357609 Dual damascene-like subtractive metal etch scheme
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US Patent 9054164 Method of forming high density, high shorting margin, and low capacitance interconnects by alternating recessed trenches
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11682617
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Patent Primary Examiner
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Patricia D Valenzuela
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CPC Code
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H01L 23/528
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H01L 23/53209
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H01L 23/53295
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H01L 21/7682
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H01L 23/5222
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H01L 23/5226
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