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US Patent 11688736 Multi-gate device and related methods
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Patent
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Date Filed
April 4, 2022
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Date of Patent
June 27, 2023
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Patent Application Number
17657941
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Patent Citations
US Patent 9548303 FinFET devices with unique fin shape and the fabrication thereof
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 11296082 Multi-gate device and related methods
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US Patent 8796666 MOS devices with strain buffer layer and methods of forming the same
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US Patent 8963258 FinFET with bottom SiGe layer in source/drain
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US Patent 9093530 Fin structure of FinFET
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US Patent 9171929 Strained structure of semiconductor device and method of making the strained structure
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11688736
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Patent Primary Examiner
David C Spalla
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CPC Code
H01L 29/0649
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H01L 29/0653
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H01L 29/0665
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H01L 29/0669
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H01L 29/0673
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H01L 29/41791
0
H01L 29/66439
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H01L 29/6653
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H01L 29/66553
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H01L 29/6656
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