Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 24, 2015
Patent Application Number
13800817
Date Filed
March 13, 2013
Patent Citations Received
0
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Patent Primary Examiner
Patent abstract
A FinFET includes a substrate, a fin structure on the substrate, a source in the fin structure, a drain in the fin structure, a channel in the fin structure between the source and the drain, a gate dielectric layer over the channel, and a gate over the gate dielectric layer. At least one of the source and the drain includes a bottom SiGe layer.
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