US Patent 11688791 Gate structure and method

A semiconductor structure includes a first active region over a substrate and extending along a first direction, a gate structure over the first active region and extending along a second direction substantially perpendicular to the first direction, a gate-cut feature abutting an end of the gate structure, and a channel isolation feature extending along the second direction and between the first active region and a second active region. The gate structure includes a metal electrode in direct contact with the gate-cut feature. The channel isolation feature includes a liner on sidewalls extending along the second direction and a dielectric fill layer between the sidewalls. The gate-cut feature abuts an end of the channel isolation feature and the dielectric fill layer is in direct contact with the gate-cut feature.