Log in
Sign up
Golden has been acquired by ComplyAdvantage.Read about it here ⟶
‌

US Patent 12112986 FinFET device and method

Patent 12112986 was granted and assigned to Taiwan Semiconductor Manufacturing Company on October, 2024 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Patent abstract

A device includes a fin over a substrate, the fin including a first end and a second end, wherein the first end of the fin has a convex profile, an isolation region adjacent the fin, a gate structure along sidewalls of the fin and over the top surface of the fin, a gate spacer laterally adjacent the gate structure, and an epitaxial region adjacent the first end of the fin.

Timeline

No Timeline data yet.

Further Resources

Title
Author
Link
Type
Date
No Further Resources data yet.

References

Find more entities like US Patent 12112986 FinFET device and method

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
Open Query Tool
Access by API
Golden Query Tool
Golden logo