Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yi-Wei Chiu0
Ying Ting Hsia0
Chih-Shan Chen0
Chih-Teng Liao0
Tzu-Chan Weng0
Date of Patent
November 7, 2017
0Patent Application Number
154365680
Date Filed
February 17, 2017
0Patent Citations Received
...
Patent Primary Examiner
Patent abstract
A FinFET device and a method of forming the same are provided. A method includes forming a fin over a substrate. An isolation region is formed adjacent the fin. A dummy gate structure is formed over the fin. The fin adjacent the dummy gate structure is recessed to form a first recess. The first recess has a U-shaped bottom surface. The U-shaped bottom surface is below a top surface of the isolation region. The first recess is reshaped to form a reshaped first recess. The reshaped first recess has a V-shaped bottom surface. At least a portion of the V-shaped bottom surface comprises one or more steps. A source/drain region is epitaxially grown in the reshaped first recess.
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