US Patent 11694890 Substrate processing method and substrate processing apparatus
Patent 11694890 was granted and assigned to Tokyo Electron on July, 2023 by the United States Patent and Trademark Office.
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US Patent 11694890 Substrate processing method and substrate processing apparatus
Article
A substrate processing method for forming a nitride film on a substrate, includes: a raw material gas supply step of supplying a raw material gas containing an element to be nitrided; a hydrogen gas supply step of, after the raw material gas supply step, supplying a hydrogen gas activated by plasma; a thermal nitriding step of supplying a first nitriding gas containing nitrogen activated by heat and nitriding the element; and a plasma nitriding step of supplying a second nitriding gas containing nitrogen activated by plasma and nitriding the element.
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Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
116948900
Date of Patent
July 4, 2023
0Patent Application Number
168292220
Date Filed
March 25, 2020
0Patent Citations
Patent Primary Examiner
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