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US Patent 11699474 SOT-MRAM with shared selector

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
March 16, 2022
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Date of Patent
July 11, 2023
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Patent Application Number
17696394
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Patent Citations
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US Patent 9230623 Magnetic memory devices and methods of operating the same
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US Patent 9530478 Memory device using spin hall effect and methods of manufacturing and operating the memory device
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US Patent 9542987 Magnetic memory cells with low switching current density
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US Patent 9881660 Magnetic memory
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US Patent 10103199 Magnetic memory
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US Patent 10147473 Magnetic memory
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US Patent 10361358 Spin orbit torque (SOT) MRAM having a source line connected to a spin orbit conductive layer and arranged above a magnetoresistive element
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US Patent 10381060 High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array
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US Patent 10381551 Spin orbit torque magnetoresistive random access memory containing shielding element and method of making thereof
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US Patent 10553783 Spin orbit torque magnetoresistive random access memory containing shielding element and method of making thereof
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•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11699474
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Patent Primary Examiner
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Tri M Hoang
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CPC Code
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G11C 11/161
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G11C 11/18
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G11C 11/1659
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G11C 11/1655
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G11C 11/1657
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G01R 33/093
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G01R 33/098
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H01L 27/228
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H01L 43/10
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H01L 43/04
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