Patent 11699697 was granted and assigned to ChangXin Memory Technologies on July, 2023 by the United States Patent and Trademark Office.
An electrostatic protection circuit connected with an internal circuit is provided. The electrostatic protection circuit includes: a first circuit, a first diode connected in parallel with the first circuit, a second circuit, and a second diode connected in parallel with the second circuit. The first circuit is connected between a power supply pad and an internal circuit input terminal. The second circuit is connected between the internal circuit input terminal and a ground pad. The first circuit and the second circuit are diode-triggered silicon controlled rectifier circuits. The technical solution of the disclosure can improve electrostatic protection capability of a charged device model of a chip.