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US Patent 11699701 Semiconductor device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Date Filed
April 10, 2020
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Date of Patent
July 11, 2023
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Patent Application Number
16845102
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Patent Citations
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US Patent 8826213 Parasitic capacitance extraction for FinFETs
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US Patent 8859371 Method for manufacturing semiconductor device having dual gate dielectric layer
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US Patent 8877625 Methods of forming semiconductor devices with different insulation thickness on the same semiconductor substrate and the resulting devices
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US Patent 9257348 Methods of forming replacement gate structures for transistors and the resulting devices
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US Patent 9287387 Static memory cell and formation method thereof
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US Patent 9461044 Fin field effect transistor, semiconductor device and fabricating method thereof
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US Patent 9502567 Semiconductor fin structure with extending gate structure
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US Patent 9871123 Field effect transistor and manufacturing method thereof
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US Patent 9954081 Fin field effect transistor, semiconductor device and fabricating method thereof
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US Patent 10020304 Fin field effect transistor, semiconductor device and fabricating method thereof
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•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11699701
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Patent Primary Examiner
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Sophia T Nguyen
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CPC Code
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H01L 21/823857
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H01L 21/823431
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H01L 21/823821
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H01L 21/823456
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H01L 21/82385
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H01L 27/0886
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H01L 27/0924
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H01L 27/0922
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H01L 29/66545
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H01L 21/823828
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•••

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