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US Patent 11699722 Stacked, high-blocking InGaAs semiconductor power diode
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Patent
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Date Filed
January 19, 2022
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Date of Patent
July 11, 2023
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Patent Application Number
17579122
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Patent Citations
US Patent 10312381 III-V semiconductor diode
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US Patent 10411146 High absorption infrared superlattices
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US Patent 10340394 III-V semiconductor diode
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US Patent 11257909 Stacked, high-blocking InGaAs semiconductor power diode
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US Patent 10192745 Method for manufacturing a layer stack from a p+-substrate, a p−-layer, an n−-layer and a third layer
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US Patent 10263124 III-V semiconductor diode
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11699722
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Patent Primary Examiner
Wasiul Haider
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CPC Code
H01L 29/207
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H01L 29/861
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H01L 29/8611
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