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US Patent 11699733 Semiconductor devices

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
August 9, 2021
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Date of Patent
July 11, 2023
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Patent Application Number
17397099
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Patent Citations
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US Patent 8963258 FinFET with bottom SiGe layer in source/drain
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US Patent 9093530 Fin structure of FinFET
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US Patent 9171929 Strained structure of semiconductor device and method of making the strained structure
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US Patent 9548303 FinFET devices with unique fin shape and the fabrication thereof
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 10192819 Integrated circuit structure incorporating stacked field effect transistors
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US Patent 9627540 Semiconductor device and manufacturing method thereof
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US Patent 10332803 Hybrid gate-all-around (GAA) field effect transistor (FET) structure and method of forming
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US Patent 8536029 Nanowire FET and finFET
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US Patent 8796666 MOS devices with strain buffer layer and methods of forming the same
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11699733
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Patent Primary Examiner
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Joseph C. Nicely
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CPC Code
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H01L 29/66795
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H01L 29/785
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H01L 29/66545
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H01L 29/66439
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H01L 21/823431
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H01L 27/0886
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H01L 29/42392
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