Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 11, 2023
0Patent Application Number
171908880
Date Filed
March 3, 2021
0Patent Citations
Patent Citations Received
Patent Primary Examiner
A device comprises a substrate, a semiconductor channel over the substrate, and a gate structure over and laterally surrounding the semiconductor channel. The gate structure comprises a first dielectric layer comprising a first dielectric material including dopants. A second dielectric layer is on the first dielectric layer, and comprises a second dielectric material substantially free of the dopants. A metal fill layer is over the second dielectric layer.
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