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US Patent 11705504 Stacked nanosheet transistor with defect free channel
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Patent
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Date Filed
December 2, 2021
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Date of Patent
July 18, 2023
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Patent Application Number
17540315
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Patent Citations
US Patent 10297664 Nanosheet transistor with uniform effective gate length
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US Patent 9711414 Strained stacked nanosheet FETS and/or quantum well stacked nanosheet
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US Patent 10741558 Nanosheet CMOS device and method of forming
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US Patent 9224811 Stacked semiconductor device
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US Patent 9461114 Semiconductor devices with structures for suppression of parasitic bipolar effect in stacked nanosheet FETs and methods of fabricating the same
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11705504
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Patent Primary Examiner
Nilufa Rahim
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