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US Patent 11705507 Semiconductor device and forming method thereof

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
May 28, 2021
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Date of Patent
July 18, 2023
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Patent Application Number
17333908
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Patent Citations
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9245805 Germanium FinFETs with metal gates and stressors
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US Patent 9418897 Wrap around silicide for FinFETs
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US Patent 9450094 Semiconductor process and fin-shaped field effect transistor
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US Patent 9520482 Method of cutting metal gate
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
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US Patent 9755019 Semiconductor device and manufacturing method thereof
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US Patent 9812363 FinFET device and method of forming same
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US Patent 9960273 Integrated circuit structure with substrate isolation and un-doped channel
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•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11705507
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Patent Primary Examiner
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Hsien-Ming Lee
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