US Patent 11710521 Static random-access memory cell design

6T-SRAM cell designs for larger SRAM arrays and methods of manufacture generally include a single fin device for both nFET (pass-gate (PG) and pull-down (PD)) and pFET (pull-up (PU). The pFET can be configured with a smaller effective channel width (Weff) than the nFET or with a smaller active fin height. An SRAM big cell consumes the (111) 6t-SRAM design area while provide different Weff ratios other than 1:1 for PU/PD or PU/PG as can be desired for different SRAM designs.