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US Patent 11715692 Microelectronic devices including conductive rails, and related methods

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
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Current Assignee
Micron Technology
Micron Technology
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Date Filed
August 11, 2020
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Date of Patent
August 1, 2023
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Patent Applicant
Micron Technology
Micron Technology
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Patent Application Number
16990580
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Patent Citations
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US Patent 9177853 Barrier layer stack for bit line air gap formation
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US Patent 9337203 Semiconductor device with line-type air gaps and method for fabricating the same
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US Patent 9425200 Semiconductor device including air gaps and method for fabricating the same
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US Patent 9460958 Air gap isolation in non-volatile memory
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US Patent 9524779 Three dimensional vertical NAND device with floating gates
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US Patent 9524904 Early bit line air gap formation
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US Patent 9698149 Non-volatile memory with flat cell structures and air gap isolation
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US Patent 9786598 Semiconductor device with air gaps and method for fabricating the same
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US Patent 10115459 Multiple liner interconnects for three dimensional memory devices and method of making thereof
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US Patent 10236047 Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAM
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•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11715692
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Patent Primary Examiner
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Tony Tran
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CPC Code
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H01L 45/146
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H01L 27/0688
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H01L 27/1021
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H01L 27/2409
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H01L 45/1233
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