Patent attributes
A semiconductor device structure is provided. The semiconductor device structure includes a pair of source/drain features formed in a semiconductor substrate and a gate stack formed over a portion of the semiconductor substrate that is between the pair of source/drain features. The semiconductor device structure also includes gate spacers extend along opposing sidewalls of the gate stack and protrude above an upper surface of the gate stack. Additionally, the semiconductor device structure includes a first capping layer formed over the gate stack and spaced apart from the upper surface of the gate stack by a gap. Opposing sidewalls of the first capping layer are covered by portions of the gate spacers that protrude above the upper surface of the gate stack.