Is a
Patent attributes
Patent Applicant
0
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yi-Wei Chen0
Chih-Sen Huang0
Ching-Ling Lin0
Ching-Wen Hung0
Jia-Rong Wu0
Tsung-Hung Chang0
Yi-Hui Lee0
Date of Patent
February 16, 2016
0Patent Application Number
145291290
Date Filed
October 30, 2014
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a metal gate thereon and an interlayer dielectric (ILD) layer around the metal gate; removing part of the metal gate to form a recess; and depositing a mask layer in the recess and on the ILD layer while forming a void in the recess.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
