US Patent 12132076 Capacitance structure and forming method thereof

A capacitance structure and a forming method thereof are provided, and the forming method includes: an annular gasket is formed on a substrate, and after a central through hole exposing a part of a surface of the substrate is formed in a center of the annular gasket, a first capacitance structure is formed in the central through hole; a dielectric layer covering the substrate, the annular gasket and the first capacitance structure is formed; the dielectric layer is etched to form an etching hole communicating with the central through hole in the dielectric layer; and a second capacitance structure connected to the first capacitance structure is formed in the etching hole.