Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 13, 2010
Patent Application Number
12185857
Date Filed
August 5, 2008
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device and a method for fabricating the same that includes a drain contact that can prevent bridging between contact metals in metal contact line (M1C) processes. The method includes forming a contact hole extending through an interlayer dielectric film in a space between respective gate electrodes to expose an undercut region, filling the contact hole and the undercut region with a photosensitive material, removing the photosensitive material from the contact hole and then forming a drain contact in the contact hole.
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