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US Patent 11749328 Magnetoresistive memory device and manufacturing method thereof

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US Patent 11749328 Magnetoresistive memory device and manufacturing method thereof

Article

A method includes forming bottom conductive lines over a wafer. A first magnetic tunnel junction (MTJ) stack is formed over the bottom conductive lines. Middle conductive lines are formed over the first MTJ stack. A second MTJ stack is formed over the middle conductive lines. Top conductive lines are formed over the second MTJ stack.

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Is a

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

11749328

Patent Inventor Names

Chee-Wee Liu

Chih-Lin Wang

Liang-Chor Chung

Shao-Yu Lin

Ya-Jui Tsou

Zong-You Luo

Date of Patent

September 5, 2023

Patent Application Number

17871983

Date Filed

July 25, 2022

Patent Citations

US Patent 11107859 Memory cell with unipolar selectors

US Patent 7405958 Magnetic memory device having XP cell and Str cell in one chip

US Patent 11189782 Multilayered bottom electrode for MTJ-containing devices

US Patent 7755093 Semiconductor storage device and method of manufacturing the same

US Patent 8143146 Method for manufacturing a nonvolatile storage device

US Patent 8198618 Nonvolatile memory device and manufacturing method thereof

US Patent 8411494 Three-dimensional magnetic random access memory with high speed writing

US Patent 8551852 Semiconductor memory device and method for manufacturing same

US Patent 8786040 Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same

US Patent 9087576 Low temperature fabrication method for a three-dimensional memory device and structure

US Patent 9142762 Magnetic tunnel junction and method for fabricating a magnetic tunnel junction

US Patent 9496486 Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same

US Patent 9502466 Dummy bottom electrode in interconnect to reduce CMP dishing

US Patent 9570670 Magnetic device and method of fabricating the same

US Patent 9865649 Integrated two-terminal device and logic device with compact interconnects having shallow via for embedded application

US Patent 10026779 Magnetoresistive memory device and manufacturing method of the same

US Patent 11227645 Spin-torque transfer switchable magnetic tunnel junction unit and a memory device

US Patent 10128314 Vertical bipolar transistor

US Patent 10256190 Variable resistance memory devices

US Patent 10290679 High-Density STT-MRAM with 3D arrays of MTJs in multiple levels of interconnects and method for producing the same

US Patent 11233090 Double selector element for low voltage bipolar memory devices

US Patent 10700125 Integrated system chip with magnetic module

US Patent 10784440 Magnetic random access memory with various size magnetic tunneling junction film stacks

US Patent 10840439 Magnetic tunnel junction (MTJ) fabrication methods and systems

US Patent 10886330 Memory device having overlapping magnetic tunnel junctions in compliance with a reference pitch

US Patent 11410714 Magnetoresistive memory device and manufacturing method thereof

US Patent 11417378 Integrated circuit device

Patent Primary Examiner

Victoria K. Hall

CPC Code

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