Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
John Hautala
M. Arif Zeeshan
Kelvin Chan
Shantanu Kallakuri
Sony Varghese
Date of Patent
September 5, 2023
Patent Application Number
17028259
Date Filed
September 22, 2020
Patent Citations
Patent Citations Received
Patent Primary Examiner
Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component) obtained using directional etching to remove predetermined portions of a seed layer covering the substrate. In several embodiments, directional etching followed by selective deposition can enable fill material (e.g., metal) patterning in tight spaces without any voids or seams. Void-free material depositions may be used in a variety of semiconductor devices, such as transistors, dual work function stacks, dynamic random-access memory (DRAM), non-volatile memory, and the like.
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