Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kelvin Chan0
Shantanu Kallakuri0
Sony Varghese0
John Hautala0
M. Arif Zeeshan0
Date of Patent
October 29, 2024
0Patent Application Number
182249040
Date Filed
July 21, 2023
0Patent Citations
Patent Primary Examiner
CPC Code
Patent abstract
Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component) obtained using directional etching to remove predetermined portions of a seed layer covering the substrate. In several embodiments, directional etching followed by selective deposition can enable fill material (e.g., metal) patterning in tight spaces without any voids or seams. Void-free material depositions may be used in a variety of semiconductor devices, such as transistors, dual work function stacks, dynamic random-access memory (DRAM), non-volatile memory, and the like.
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